MOSFET
Exibindo 61–80 de 355 resultadosClassificado por mais recente
IXTH20N60 POWER MOSFET 20AMPER 600V
IXTH20N60 POWER MOSFET 20AMPER 600V IXXYS
ENCAPSULAMENTO TO247

IXFX50N50 POWER MOSFET 50AMPER 500V
IXFX50N50 POWER MOSFET 50AMPER 500V IXXYS
ENCAPSULAMENTO TO247

MPF960 TRANSISTOR MOSFET
MPF960
Polaridade do transistor : N-Channel
Fonte de dreno da Tensão de ruptura : 60 V
Porta-Tensão de ruptura : + / - 20 V
Corrente de dreno contínua : 2 A
Fonte de dreno da resistência RDS (on) : 1,7 Ohms
Temperatura máxima de operação : + 150 C
Transdutância em avanço gFS (Max / Min) : 0.38 S
Temperatura mínima de operação : - 55 C
Dissipação de energia : 1 W

FQP50N06 MOSFET TO-220 N-CH 60V 50A
FQP50N06
Polaridade do transistor : N-Channel
Fonte de dreno da Tensão de ruptura : 60 V
Porta-Tensão de ruptura : + / - 25 V
Corrente de dreno contínua : 50 A
Fonte de dreno da resistência RDS (on) : 0,022 Ohms
Temperatura máxima de operação : + 175 C
Tempo de queda : 65 ns
Transdutância em avanço gFS (Max / Min) : 22 S
Temperatura mínima de operação : - 55 C
Dissipação de energia : 120 W
Tempo de ascensão : 105 ns

BUZ72A MOSFET CANAL N 10AMPER 100V
BUZ72A MOSFET CANAL N 10AMPER 100V
.100 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Features
• 14A, 50V
• rDS(ON) = 0.100W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND

IRF230 9A 200V MOSFET Power Transistor
IRF230 9A 200V MOSFET Power Transistor
Corrente de dreno contínua: 9A
(ID = VGS @ 10V, CT = 25 ° C)
Corrente de dreno contínua 6A
(ID @ VGS = 10V, TC = 100 ° C)
Pulsada Corrente de dreno: 36A
Max. Dissipação de energia: 75W
Porta-a-Fonte de tensão: ± 20V
Repetitivo Avalanche Energia: 7.5mJ
Peak diodo da recuperaà dv / dt: 5V/ns
Junção e Armazenamento Temperatura de Operação: -55 ° C a 150 ° C
Temperatura chumbo (1,6 mm de caso, 10 seg): 300 ° C

IRG4PC50UD IGBT 600V 27AMPER1.65 VCE
G4PC50UD IGBT 600V 27AMPER 2.3 VCE
TRANSISTOR IGBT DISCRETO FAMILIA
G4BC G4PC G4PF G4PH ETC
MATERIAL DISPONIVEL PARA ENTREGA 1 DIA UTIL

IRG4BC40UP IGBT 600V 20AMPER 1.72 VCE
G4BC40UP IGBT 600V 20AMPER 1.71 VCE
TRANSISTOR IGBT DISCRETO FAMILIA
G4BC G4PC G4PF G4PH ETC
MATERIAL DISPONIVEL PARA ENTREGA 1 DIA UTIL

IRGPS60B120KD IGBT 1200V 60A 2.5VCE
IRGPS60B120KD IGBT 1200V 60A 2.5VCE
COPACK IGBT ENCAPSULAMENTO: TO-247 A TOPOLOGIA: N-CHANNEL
VCES: 1200V
VCE (ON) TYP: 2.5V
@ VGE: 15V
IC: 60A
LEAD FREE

IRGP50B60PD IGBT 600V 33A 2VCE
GP50B60PD IGBT 600V 33A 2VCE
COPACK IGBT ENCAPSULAMENTO: TO-247 AC TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 2V
@ VGE: 15V
IC: 33A
LEAD FREE

IRGP50B60PD1 IGBT 600V 33A 2VCE
GP50B60PD1 IGBT 600V 33A 2VCE
COPACK IGBT ENCAPSULAMENTO: TO-247 AC TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 2V
@ VGE: 15V
IC: 33A
LEAD FREE

IRGP4068D IGBT 600V 48A 1.65VCE
IRGB4068D IGBT 600V 48A 1.65VCE
COPACK IGBT
ENCAPSULAMENTO: TO-247 AC
TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 1.65V
@ VGE: 15V
IC: 48A
LEAD FREE

IRGB4063D IGBT 600V 48A 1.65VCE
IRGB4063D IGBT 600V 48A 1.65VCE
COPACK IGBT ENCAPSULAMENTO: TO-247 AB TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 1.65V
@ VGE: 15V
IC: 48A
LEAD FREE

IRGP35B60PD IGBT 600V 22A 1.85VCE
IRGP35B60PD IGBT
COPACK IGBT ENCAPSULAMENTO: TO-247 ACTOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 1.85V
@ VGE: 15V
IC: 22A
LEAD FREE

IRGP30B60KD IGBT 600V 30A 1.95VCE
IRGP30B60KD
DISCRETE IGBT
ENCAPSULAMENTO: TO-247AD
TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 1.95V
@ VGE: 20V
IC: 30A
LEAD FREE
IRGB20B60PD IGBT 600V 13A 2.05VCE
IRGB20B60PD IGBT 600V 13A 2.05VCE
COPACK IGBT ENCAPSULAMENTO: TO-247 AB TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 2;05V
@ VGE: 16V
IC: 13A
LEAD FREE

IRGP30B120KD IGBT 600V 13A 2.05VCE
IRGP30B120KD
COPACK IGBT ENCAPSULAMENTO: T0-247 AD TOPOLOGIA: N-CHANNEL
VCES: 1200V
VCE (ON) TYP: 2.28V
@ VGE: 15V
IC: 25A
LEAD FREE

IRGB4B60KD IGBT 600V 7.6AMPER 2.1 VCE
COPACK IGBT
ENCAPSULAMENTO: TO-220 AB
TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 2.10
LEAD FREE
IRGB4B60KD IGBT 600V 7.6AMPER 2.1 VCE
TRANSISTOR IGBT DISCRETO FAMILIA
G4BC G4PC G4PF G4PH ETC
MATERIAL DISPONIVEL PARA ENTREGA 1 DIA UTIL

IRGB4062D IGBT 600V 24A 1.65VCE
IRGB4062D IGBT 600V 24A 1.65VCE
COPACK IGBT ENCAPSULAMENTO: TO-220 AB TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 1.65V
@ VGE: 15V
IC: 24A
LEAD FREE

IRGB15B60KD IGBT 600V 15A 1.8VCE
IRGB15B60KD IGBT 600V 15A 1.8VCE
COPACK IGBT ENCAPSULAMENTO: TO-220 AB TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 1.8V
@ VGE: 15V
IC: 15A
LEAD FREE