Descrição
TRANSISTOR IGBT DISCRETO EMCAPSULAMENTO TO220
IRGB4B60KD IGBT 600V 7.6AMPER 2.1 VCE
INSULATED GATE BIPOLAR TRANSISTOR
MATERIAL DISPONIVEL PARA ENTREGA 1 DIA UTIL
DISCRETE IGBT ENCAPSULAMENTO: TO-247 ABTOPOLOGIA: N-CHANNEL
ENCAPSULAMENTO: TO-220 AC
TOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 2.1V
@ VGE: 15V
IC: 7.6A
LEAD FREE
