MOSFET
Exibindo 301–320 de 355 resultadosClassificado por mais recente
MP2063 PNP GERMANIUM 90V 25 AMP
TRANSISTOR MP2063
MP2063 NTE Equvilent NTE179 TRANSISTOR PNP GERMANIUM 90V 25 AMP TO-3 CASE AUDIO POWER AMP
Transistor RFP10N15
Transistores de Efeito de Campo de Potência em Modo de Aprimoramento Canal N.
BFQ231 NPN TO202 110V 0,3AMPER 3W
TRANSISTOR VIDEO BFQ231
BFQ231 NPN TO202 110V 0,3AMPER 3W
2N5194 PNP 60V 4AMPER 40V 2MHZ
TRANSISTOR 2N5194 PNP
2N5194 PNP 60V 4AMPER 40V 2MHZ
ENCAPSULAMENTO TO126
MJE2955 PNP 100V 15AMPER 100W
TRANSISTOR MJE2955 CANAL PNP
MJE2955-PNP 100V 15AMPER 100W
MSA0386 TRANSISTOR RF +-13DBM POWER 400MW 70MA
TRANSISTOR MSA0386 AMPLIFICADOR MMC
CASCADABLE SILICON BIPOLAR MMC AMPLIFIER
RF +-13DBM POWER 400MW 70MA
MRF951A TRANSISTOR RF DISCRETO
TRANSISTOR MRF951A
RF MICROWAVE DISCRETO LOW POWER
MRF581A RF MICROWAVE DISCRETO LOW POWER 5GHZ
TRANSISTOR MRF581
TRANSISTOR DE RF MICRONDA BAIXO PODER DISCRETO
RF MICROWAVE DISCRETO LOW POWER 5GHZ
BUZ71 MOSFET TO220 CANAL N 50V 14AMPER 0.1R
TRANSISTOR MOSFET TO220 CANAL N 50V 14AMPER 0.1R
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Features
• 14A, 50V
• rDS(ON) = 0.100W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRF530 TO220 CANAL N 100V 14AMPER
TRANSISTOR IRF530 MOSFET CANAL N
IRF530 TO220 CANAL N 100V 14AMPER
BRY39 UNIJUNÇAO PROGRAMAVEL BRY39
TRANSISTOR UNIJUNÇAO PROGRAMAVEL BRY39QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Silicon controlled switch
PNP TRANSISTOR
VEBO emitter-base voltage open collector -70 V
NPN TRANSISTOR
VCBO collector-base voltage open emitter 70 V
IERM repetitive peak emitter current -2.5 A
Ptot total power dissipation Tamb £ 25 °C 275 mW
Tj junction temperature 150 °C
VAK forward on-state voltage IA = 50 mA; IAG = 0; RKG-K = 10 kW 1.4 V
IH holding current IAG = 10 mA; VBB = -2 V; RKG-K = 10 kW 1 mA
ton turn-on time 0.25 ms
toff turn-off time 15 ms
Programmable unijunction transistor
VGA gate-anode voltage 70 V
IA anode current (DC) Tamb £ 25 °C 175 mA
Tj junction temperature 150 °C
Ip peak point current VS = 10 V; RG = 10 kW 0.2 mA
2SK104 CANAL N T092 VGDSS-20
TRANSISTOR MOSFET CANAL N
2SK104 CANAL N T092 VGDSS-20
2SK65 MOSFET CANAL N 60VOLTS 200MA
TRANSISTOR MOSFET CANAL N
2SK65 CANAL N T092VDSS60 VGSS12 ID0,1A IDP0.2