Descrição
TRANSISTOR IGBT DISCRETO EMCAPSULAMENTO TO220
G4BC40UP IGBT 600V 12AMPER 1.95 VCE
INSULATED GATE BIPOLAR TRANSISTOR
MATERIAL DISPONIVEL PARA ENTREGA 1 DIA UTIL
DISCRETE IGBT ENCAPSULAMENTO: TO-220 ABTOPOLOGIA: N-CHANNEL
VCES: 600V
VCE (ON) TYP: 1.72V
@ VGE: 15V
IC: 20A
LEAD FREE
