Descrição
TRANSISTOR UNIJUNÇAO PROGRAMAVEL BRY39
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Silicon controlled switch
PNP TRANSISTOR
VEBO emitter-base voltage open collector -70 V
NPN TRANSISTOR
VCBO collector-base voltage open emitter 70 V
IERM repetitive peak emitter current -2.5 A
Ptot total power dissipation Tamb £ 25 °C 275 mW
Tj junction temperature 150 °C
VAK forward on-state voltage IA = 50 mA; IAG = 0; RKG-K = 10 kW 1.4 V
IH holding current IAG = 10 mA; VBB = -2 V; RKG-K = 10 kW 1 mA
ton turn-on time 0.25 ms
toff turn-off time 15 ms
Programmable unijunction transistor
VGA gate-anode voltage 70 V
IA anode current (DC) Tamb £ 25 °C 175 mA
Tj junction temperature 150 °C
Ip peak point current VS = 10 V; RG = 10 kW 0.2 mA
