TRANSISTOR
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TRANSISTOR MPSU51 PNP 40V 2AMPER 10W 50MHZ
TRANSISTOR MPSU51 CANAL PNP
MPSU51-PNP 40V 2AMPER 10W 50MHZ
TRANSISTOR MPSU10 NPN 300V 0,5AMPER 10W 60MHZ
TRANSISTOR VIDEO MPSU10
MPSU10-NPN 300V 0,5AMPER 10W 60MHZ
MPSU95 CANAL PNP 50V 2AMPER 10W 160MHZ
MPSU95 TRANSISTOR DARLINGTON
CANAL PNP 50V 2AMPER 10W 160MHZ
MSA0486 TRANSISTOR DE RF AMPLIFICADOR
Description
The MSA-0486 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC)
housed in a low cost, surface mount plastic package.
This MMIC is designed for use as a general purpose 50Ω
gain block. Typical applications include narrow and
broad band IF and RF amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using Avago’s 10 GHz fT,
25 GHz fMAX, silicon bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold
metallization to achieve excellent performance,
uniformity and reliability. The use of an external bias
resistor for temperature and current stability also allow
MSA0386 TRANSISTOR RF +-13DBM POWER 400MW 70MA
TRANSISTOR MSA0386 AMPLIFICADOR MMC
CASCADABLE SILICON BIPOLAR MMC AMPLIFIER
RF +-13DBM POWER 400MW 70MA
MRF581A RF MICROWAVE DISCRETO LOW POWER 5GHZ
TRANSISTOR MRF581
TRANSISTOR DE RF MICRONDA BAIXO PODER DISCRETO
RF MICROWAVE DISCRETO LOW POWER 5GHZ
BUZ71 MOSFET TO220 CANAL N 50V 14AMPER 0.1R
TRANSISTOR MOSFET TO220 CANAL N 50V 14AMPER 0.1R
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Features
• 14A, 50V
• rDS(ON) = 0.100W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRF530 TO220 CANAL N 100V 14AMPER
TRANSISTOR IRF530 MOSFET CANAL N
IRF530 TO220 CANAL N 100V 14AMPER
FS12KM DRIVE 10V VGDSS 200V RDS ON 0.40R ID 12AMPER
TRANSISTOR MOSFET FS12KMA TO220
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
DRIVE 10V VGDSS 200V RDS ON 0.40R ID 12AMPER
2SB642S=B642S 60V PNP
TRANSISTOR PNP SILICIO
B642S=2SB642S
VCBO -60V
VCEO -50V
VEBO -7V
ICP -200
IC -100
PC 400
Tj 150
Tstg -55 ~150
BRY39 UNIJUNÇAO PROGRAMAVEL BRY39
TRANSISTOR UNIJUNÇAO PROGRAMAVEL BRY39QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Silicon controlled switch
PNP TRANSISTOR
VEBO emitter-base voltage open collector -70 V
NPN TRANSISTOR
VCBO collector-base voltage open emitter 70 V
IERM repetitive peak emitter current -2.5 A
Ptot total power dissipation Tamb £ 25 °C 275 mW
Tj junction temperature 150 °C
VAK forward on-state voltage IA = 50 mA; IAG = 0; RKG-K = 10 kW 1.4 V
IH holding current IAG = 10 mA; VBB = -2 V; RKG-K = 10 kW 1 mA
ton turn-on time 0.25 ms
toff turn-off time 15 ms
Programmable unijunction transistor
VGA gate-anode voltage 70 V
IA anode current (DC) Tamb £ 25 °C 175 mA
Tj junction temperature 150 °C
Ip peak point current VS = 10 V; RG = 10 kW 0.2 mA
BSW68 NPN TO5 150V 1,5AMPER
TRANSISTOR BSW68 NPN TO5QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter
BSW66A - - 100 V
BSW67A - - 120 V
BSW68A - - 150 V
VCEO collector-emitter voltage open base
BSW66A - - 100 V
BSW67A - - 120 V
BSW68A - - 150 V
IC collector current (DC) - - 1 A
Ptot total power dissipation Tcase £ 25 °C - - 5 W
hFE DC current gain IC = 10 mA; VCE = 5 V 30 - -
IC =
500 mA; VCE = 5 V 30 - -
fT
transition frequency IC = 100 mA; VCE = 20 V; f = 100 MHz - 130 - MHz
toff turn-off time ICon = 500 mA; IBon = 50 mA; IBoff = -50 mA - 900 - ns
BSW67 NPN 100V 1,5AMPER
TRANSISTOR BSW67 NPN TO5QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter
BSW66A - - 100 V
BSW67A - - 120 V
BSW68A - - 150 V
VCEO collector-emitter voltage open base
BSW66A - - 100 V
BSW67A - - 120 V
BSW68A - - 150 V
IC collector current (DC) - - 1 A
Ptot total power dissipation Tcase £ 25 °C - - 5 W
hFE DC current gain IC = 10 mA; VCE = 5 V 30 - -
IC =
500 mA; VCE = 5 V 30 - -
fT
transition frequency IC = 100 mA; VCE = 20 V; f = 100 MHz - 130 - MHz
toff turn-off time ICon = 500 mA; IBon = 50 mA; IBoff = -50 mA - 900 - ns
TRANSISTOR BSS52 DARLINGTON NPN 80V
TRANSISTOR DARLINGTON
BSS52QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter
BSS50 - - 60 V
BSS51 - - 80 V
BSS52 - - 90 V
VCES collector-emitter voltage VBE = 0
BSS50 - - 45 V
BSS51 - - 60 V
BSS52 - - 80 V
IC collector current - - 1 A
Ptot total power dissipation Tamb £ 25 °C - - 0.8 W
Tcase £ 25 °C - - 5 W
hFE DC current gain IC = 500 mA; VCE = 10 V 2000 - -
fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz - 200 - MHz
TRANSISTOR BUT92 NPN 250V 50AMPER POTENCIA
TRANSISTOR DE POTENCIA BUT92
FAST-SWITCHING POWER TRANSISTORSymbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -1.5 V) 350 V
VCEO Collector-Emitter Voltage (IB = 0) 250 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IE Emitter Current 50 A
IEM Emitter Peak Current 75 A
IB Base Current 10 A
IBM Base Peak Current 15 A
Ptot Total Power Dissipation at Tcase £ 25 oC 250 W
Tstg Storage Temperature -65 to 200 oC
Tj Junction Temperature 200 oC
BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER
TRANSISTOR SAIDA HORIZONTAL
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH515
VCBO Collector-Base Voltage (IE = 0) 1500 V
VCEO Collector-Emit ter Voltage (IB = 0) 700 V
VEBO Emitter-Base Voltage (IC = 0) 10 V
IC Collector Current 8 A
ICM Collector Peak Current (tp < 5 ms) 12 A
IB Base Current 5 A
IBM Base Peak Current (tp < 5 ms) 8 A
Ptot Total Dissipation at Tc = 25 oC 50 W
Tstg Storage Temperature -65 to 150 oC
Tj Max. Operating Junction Temperature 150 oC
2N6578 NPN DARLINTON TO3 VCEO120 VCBO120 15AMPER 200W
TRANSISTOR DE POTENCIA DARLINGTON
2N6578 NPN DARLINTON TO3 VCEO120 VCBO120 15AMPER 200W
2N6687 NPN TO3 VCEO180 VCBO100 22AMPER 200W
TRANSISTOR DE SILICIO POWER
2N6687 NPN TO3 VCEO180 VCBO100 22AMPER 200W