Descrição
TRANSISTOR IGBT DISCRETO
IRG7PH42UD IGBT 1200V 30AMPER 1.67 VCE
INSULATED GATE BIPOLAR TRANSISTOR
MATERIAL DISPONIVEL PARA ENTREGA 1 DIA UTIL
DISCRETE IGBT ENCAPSULAMENTO: TO-247 ABTOPOLOGIA: N-CHANNEL
COPACK IGBT
ENCAPSULAMENTO: TO-247 AC
TOPOLOGIA: N-CHANNEL
VCES: 1200V
VCE (ON) TYP: 1.7V
@ VGE: 15V
IC: 30A
