Descrição
TRANSISTOR IGBT DISCRETO
IRG4PH50UP IGBT 1200V 24AMPER 2.78 VCE
INSULATED GATE BIPOLAR TRANSISTOR
MATERIAL DISPONIVEL PARA ENTREGA 1 DIA UTIL
DISCRETE IGBT ENCAPSULAMENTO: TO-247 ABTOPOLOGIA: N-CHANNEL
TOPOLOGIA: N-CHANNEL
VCES: 1200V
VCE (ON) TYP: 2.78V
@ VGE: 15V
IC: 24A
LEAD FREE
