Descrição
TRANSISTOR IGBT DISCRETO EMCAPSULAMENTO TO247
IRG4PF50WD IGBT 900V 28AMPER 2.25 VCE
INSULATED GATE BIPOLAR TRANSISTOR
MATERIAL DISPONIVEL PARA ENTREGA 1 DIA UTIL
DISCRETE IGBT ENCAPSULAMENTO: TO-247 ABTOPOLOGIA: N-CHANNEL
COPACK IGBT
ENCAPSULAMENTO: TO-247 AC
TOPOLOGIA: N-CHANNEL
VCES: 900V
VCE (ON) TYP: 2.25V
@ VGE: 15V
IC: 28A


